savantic semiconductor product specification silicon pnp power transistors MJF45H11 d escription with to-220f package fast switching speeds low collector saturation voltage complement to type mjf44h11 applications for general purpose power amplification and switching regulators,converters and power amplifiers applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(tc=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -80 v v ceo collector-emitter voltage open base -80 v v ebo emitter-base voltage open collector -5 v i c collector current (dc) -10 a i cm collector current-peak -20 a t c =25 36 p d total power dissipation t a =25 2.0 w t j junction temperature 150 t stg storage temperature -55~150 thermal characteristics symbol parameter value unit r th j-c thermal resistance from junction to case 3.5 /w r th j-a thermal resistance from junction to ambient 62.5 /w fig.1 simplified outline (to-220f) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors MJF45H11 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =-30ma i b =0, -80 v v ce(sat) collector-emitter saturation voltage i c =-8a; i b =-0.4a -1.0 v v be(sat) base-emitter saturation voltage i c =-8a ;i b =-0.8a -1.5 v i ces collector cut-off current v ce =ratedbv ceo ; v be =0 -10 a i ebo emitter cut-off current v eb =-5v; i c =0 -10 a h fe-1 dc current gain i c =-2a ; v ce =-1v 60 h fe-2 dc current gain i c =-4a ; v ce =-1v 40 f t transition frequency i c =-0.5a ; v ce =-10v,f=20mhz 40 mhz c cb collector capacitance f=1mhz ; v cb =-10v 230 pf switching times t on turn-on time 0.3 s t s storage time 0.5 s t f fall time i c =-5a i b1 =- i b2 =-0.5a 0.14 s
savantic semiconductor product specification 3 silicon pnp power transistors MJF45H11 package outline fig.2 outline dimensions
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